IMBG65R260M1HXTMA1

Infineon Technologies
726-IMBG65R260M1HXTM
IMBG65R260M1HXTMA1

製造商：

說明：
碳化矽MOSFET SILICON CARBIDE MOSFET

規格書:
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庫存量: 865

庫存：
865 可立即送貨
工廠前置作業時間：
8 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個1000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$35.35 HK$35.35
HK$23.34 HK$233.40
HK$16.44 HK$1,644.00
HK$15.04 HK$7,520.00
完整捲（訂購多個1000）
HK$12.25 HK$12,250.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 碳化矽MOSFET
RoHS:  
SMD/SMT
N-Channel
1 Channel
650 V
6 A
346 mOhms
- 5 V, + 23 V
5.7 V
22 nC
- 55 C
+ 175 C
65 W
Enhancement
CoolSiC
品牌: Infineon Technologies
封裝: Reel
封裝: Cut Tape
封裝: MouseReel
產品: MOSFETs
產品類型: SiC MOSFETS
系列: CoolSiC 650V
原廠包裝數量: 1000
子類別: Transistors
技術: SiC
零件號別名: IMBG65R260M1H SP005539192
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所選屬性: 0

規格書

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

650V CoolSiC™ M1 Trench Power MOSFETs

Infineon Technologies 650V CoolSiC™ M1 Trench Power MOSFETs combine the strong physical characteristics of Silicon Carbide with unique features that increase the device's performance, robustness, and ease of use. The CoolSiC M1 MOSFETs are built on a state-of-the-art trench semiconductor process optimized to deliver the lowest application losses and the highest reliability in operation. Suitable for high temperatures and harsh operations, these devices enable the simplified and cost-effective deployment of the highest system efficiency. 

CoolSiC™ MOSFETs 650V

Infineon Technologies CoolSiC™ MOSFETs 650V combines the physical strength of silicon carbide with features amplifying device performance, reliability, and ease of use. With its state-of-the-art trench semiconductor process, the CoolSiC™ MOSFET delivers the lowest losses in the application and the highest reliability in operation. CoolSiC is the perfect fit for use in high-temperature and harsh environment applications.

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