IGT65R025D2ATMA1

Infineon Technologies
726-IGT65R025D2ATMA1
IGT65R025D2ATMA1

製造商:

說明:
氮化鎵場效應管 CoolGaN Transistor 650 V G5

壽命週期:
新產品:
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庫存量: 1,473

庫存:
1,473
可立即送貨
在途量:
2,000
預期2/4/2026
工廠前置作業時間:
18
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$96.34 HK$96.34
HK$78.42 HK$784.20
HK$65.35 HK$6,535.00
HK$58.28 HK$29,140.00
HK$54.83 HK$54,830.00
完整捲(訂購多個2000)
HK$46.53 HK$93,060.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 氮化鎵場效應管
RoHS:  
SMD/SMT
PG-HSOF-8
HEMT
1 Channel
650 V
70 A
30 mOhms
- 10 V
1.6 V
11 nC
- 55 C
+ 150 C
236 W
Enhancement
CoolGaN
品牌: Infineon Technologies
配置: Single
下降時間: 9 ns
封裝: Reel
封裝: Cut Tape
產品: Transistors
產品類型: GaN FETs
上升時間: 12 ns
系列: 650V G5
原廠包裝數量: 2000
子類別: Transistors
技術: GaN
晶體管類型: 1 N-Channel
類型: CoolGaN Transistor
標準斷開延遲時間: 18 ns
標準開啟延遲時間: 11 ns
零件號別名: IGT65R025D2 SP006026239
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.