IGI65D1414A3MSXUMA1

Infineon Technologies
726-IGI65D1414A3MSXU
IGI65D1414A3MSXUMA1

製造商:

說明:
氮化鎵場效應管 Two 140 mohm / 650 V GaN transistors in half-bridge configuration

壽命週期:
新產品:
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ECAD模型:
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庫存量: 2,392

庫存:
2,392 可立即送貨
工廠前置作業時間:
18 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$58.28 HK$58.28
HK$39.37 HK$393.70
HK$29.35 HK$2,935.00
HK$26.55 HK$26,550.00
完整捲(訂購多個3000)
HK$24.00 HK$72,000.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 氮化鎵場效應管
RoHS:  
SMD/SMT
QFN-32
N-Channel
2 Channel
650 V
170 mOhms
1.6 V
1.8 nC
- 55 C
+ 150 C
品牌: Infineon Technologies
配置: Dual
封裝: Reel
封裝: Cut Tape
產品: Transistors
產品類型: GaN FETs
原廠包裝數量: 3000
子類別: Transistors
技術: GaN
晶體管類型: 2 N-Channel
零件號別名: IGI65D1414A3MS SP005970004
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所選屬性: 0

USHTS:
8542390090
MXHTS:
8542399999
ECCN:
EAR99

CoolGaN™ 650V G5 Transistors

Infineon Technologies CoolGaN™ 650V G5 Transistors feature highly efficient gallium nitride (GaN) transistor technology for power conversion. The 650V G5 family addresses consumer, data center, industrial, and solar application challenges. The transistors offer improved system efficiency and power density with ultra-fast switching capability. The CoolGaN technology provides discrete and integrated solutions designed to enhance overall system performance. The Infineon Technologies CoolGaN 650V G5 Transistors enable high operating frequencies and reduce EMI ratings. The transistors are ideal for power distribution, switch-mode power supplies (SMPS), telecommunications, and other industrial applications.