GE04MPS06A

GeneSiC Semiconductor
905-GE04MPS06A
GE04MPS06A

製造商:

說明:
碳化矽肖特基二極管 650V 4A TO-220-2 SiC Schottky MPS

壽命週期:
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庫存量: 2,075

庫存:
2,075 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$15.86 HK$15.86
HK$13.81 HK$138.10
HK$13.07 HK$326.75
HK$12.00 HK$1,200.00
HK$11.34 HK$2,835.00
HK$10.85 HK$5,425.00
HK$10.44 HK$10,440.00
HK$9.86 HK$24,650.00
HK$9.45 HK$47,250.00

商品屬性 屬性值 選擇屬性
Navitas Semiconductor
產品類型: 碳化矽肖特基二極管
RoHS:  
SMD/SMT
TO-220-2
Single
4 A
650 V
1.25 V
22 A
1 uA
- 55 C
+ 175 C
SiC Schottky MPS
Tube
品牌: GeneSiC Semiconductor
Pd - 功率消耗 : 55 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 50
子類別: Diodes & Rectifiers
Vr - 反向電壓: 650 V
零件號別名: GEXXMPS06X
每件重量: 2 g
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所選屬性: 0

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USHTS:
8541100080
ECCN:
EAR99

650V, 1200V, & 1700V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V, 1200V, and 1700V SiC Schottky MPS™ Diodes provide low standby power losses and improved circuit efficiency. The 650V SiC Diodes have a forward current range of 6A to 20A. The 1200V SiC Diodes have a forward current range of 1A to 200A. The 1700V SiC Diodes have a forward current range of 5A to 50A. 

650V SiC Schottky MPS™ Diodes

GeneSiC Semiconductor 650V SiC Schottky MPS™ Diodes combine excellent forward and switching characteristics with robustness and thermal conductivity. The 650V diodes feature superior system ruggedness, zero recovery losses, and smaller heat sink requirements. These diodes enable extremely fast switching, reduced cooling requirements, zero reverse recovery current, and increased system power density. GeneSiC Semiconductor 650V SiC Schottky MPS Diodes are ideal for ease of paralleling without thermal runaway. The diodes are available in a variety of packages, including TO-220, TO-247, and SOT-227.