FS1000R08A7P3BHPSA1

Infineon Technologies
726-FS1000R08A7P3BHP
FS1000R08A7P3BHPSA1

製造商:

說明:
MOSFET模組 HybridPACK Drive G2 module

壽命週期:
新產品:
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庫存量: 3

庫存:
3 可立即送貨
工廠前置作業時間:
26 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$4,195.32 HK$4,195.32
HK$3,735.17 HK$44,822.04

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET模組
RoHS:  
Si
Screw Mount
HybridPACK
6.65 V
- 40 C
+ 175 C
750 W
Tray
品牌: Infineon Technologies
下降時間: 91 ns
產品: Modules
產品類型: MOSFET Modules
上升時間: 50 ns
原廠包裝數量: 6
子類別: Discrete and Power Modules
標準斷開延遲時間: 929 ns
標準開啟延遲時間: 222 ns
Vf - 順向電壓: 1.76 V
Vr - 反向電壓: 750 V
零件號別名: FS1000R08A7P3B SP005913585
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所選屬性: 0

CNHTS:
8504409100
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

HybridPACK™ Drive G2 Modules

Infineon Technologies HybridPACK™ Drive G2 Modules are compact power modules designed for hybrid and electric vehicle traction. The Infineon Technologies G2 modules offer scalable performance levels using Si or SiC technologies and different chipsets, maintaining the same module size. Introduced in 2017 with silicon EDT2 technology, it was optimized for efficiency in real-world driving. In 2021, a CoolSiC™ version was introduced, offering higher cell density and better performance. In 2023, the second generation, HybridPACK Drive G2, was launched with EDT3 (Si IGBT) and CoolSiC™ G2 MOSFET technologies, providing ease of use and integration options for sensors, enabling up to 300kW performance within 750V and 1200V classes.