FM24V05-G

Infineon Technologies
877-FM24V05-G
FM24V05-G

製造商:

說明:
F-RAM 512K (64KX8) 3.3V F-RAM

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 475

庫存:
475 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$89.35 HK$89.35
HK$83.10 HK$831.00
HK$80.56 HK$2,014.00
HK$76.77 HK$3,838.50
HK$73.82 HK$7,382.00
HK$71.93 HK$17,982.50
HK$70.28 HK$34,085.80
HK$50.22 HK$48,713.40

備用包裝

製造商 元件編號:
包裝:
Reel, Cut Tape, MouseReel
供貨情況:
庫存量
價格:
HK$89.35
最小值:
1

相似產品

Infineon Technologies FM24V05-GTR
Infineon Technologies
F-RAM 512K (64KX8) 3.3V F-RAM

商品屬性 屬性值 選擇屬性
Infineon
產品類型: F-RAM
RoHS:  
512 kbit
I2C
3.4 MHz
64 k x 8
SOIC-8
2 V
3.6 V
- 40 C
+ 85 C
FM24V05-G
Tube
品牌: Infineon Technologies
組裝國家: TH
擴散國: US
原產國: US
濕度敏感: Yes
安裝風格: SMD/SMT
工作電源電壓: 3.3 V
產品類型: FRAM
原廠包裝數量: 485
子類別: Memory & Data Storage
每件重量: 540 mg
找到產品:
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所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8542329000
CAHTS:
8542320090
USHTS:
8542320071
JPHTS:
8542320905
KRHTS:
8542321040
TARIC:
8542329000
MXHTS:
8542320299
ECCN:
3A991.b.1.b.2

非揮發性串列式FRAM

Cypress Semiconductor串列式F-RAM(鐵電隨機記憶體)將ROM的非揮發性資料存儲能力與RAM的快速度相結合。串列式F-RAM具有多種介面和密度選項,包括SPI和I2C介面、行業標準套裝及4KB至4MB的密度。Cypress串列式F-RAM與其他非揮發性存儲技術相比具有三大明顯優勢:快速寫入,極高的耐受性和低功耗。串列式F-RAM 提供100萬億週期耐久性,超越EEPROM的100萬寫入週期限度。這消除了以耗損均衡支撐產品壽命的需求。

WICED IOT Platform

Infineon Technologies WICED IoT Platform is a portfolio of wireless technologies ranging from Wi-Fi® and BLUETOOTH® to microcontrollers (MCU) built specifically for the IoT. These design-ready, secure products streamline and simplify designs. Infineon has over 20 ecosystem partners working to crack persistent design problems.  

V-Family Low-Power F-RAM

Infineon Technologies V-Family low-power F-RAM devices feature high-performance nonvolatile memory employing an advanced ferroelectric process. Infineon serial F-RAM performs write operations at bus speed, incurs no write delays, and is ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. The V-Family parallel F-RAM provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM.