CG2H40045F

MACOM
941-CG2H40045F
CG2H40045F

製造商:

說明:
氮化鎵場效應管 GaN HEMT DC-4.0GHz, 45 Watt

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 640

庫存:
640 可立即送貨
工廠前置作業時間:
26 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$2,999.64 HK$2,999.64
HK$2,560.61 HK$25,606.10

商品屬性 屬性值 選擇屬性
MACOM
產品類型: 氮化鎵場效應管
RoHS:  
Screw Mount
440193
N-Channel
120 V
6 A
- 3.8 V
- 40 C
+ 150 C
品牌: MACOM
開發套件: CG2H40045F-TB
增益: 16 dB
最大工作頻率: 4 GHz
最低工作頻率: 0 Hz
輸出功率: 45 W
封裝: Tray
產品類型: GaN FETs
原廠包裝數量: 40
子類別: Transistors
技術: GaN
晶體管類型: GaN HEMT
Vgs - 閘極-源極擊穿電壓: - 10 V, 2 V
每件重量: 9.105 g
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CG2H40xx & CG2H30xx GaN HEMTs

MACOM CG2H40xx and CG2H30xx Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to operate from a 28V rail. These transistors offer a general-purpose broadband solution to a variety of RF and microwave applications. The high efficiency, high gain, and wide bandwidth capabilities make these HEMTs ideal for linear and compressed amplifier circuits. MACOM CG2H40xx and CG2H30xx transistors offer design flexibility with a wide variety of package types, including screw-down, solder-down, pill, and flange. Typical applications include broadband amplifiers, cellular infrastructure, and radar.