C3M0032120K

Name: Wolfspeed C3M0032120K
Brand: Wolfspeed
SKU: 941-C3M0032120K
Price: 109 HKD
Availability: OutOfStock

影像僅供參考
請參閱產品規格

Mouser 編號：

941-C3M0032120K

製造商編號：

C3M0032120K

製造商：

Wolfspeed

說明：

碳化矽MOSFET 1.2kV 32mOHMS G3 SiC MOSFET

規格書:

C3M0032120K 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於Wolfspeed C3M0032120K的資訊

供貨情況

庫存：: 0

您仍可購買此商品作為延期交貨訂單。

發生意外錯誤了。請稍後再試。
在途量:: 444

預期5/6/2026

450

預期15/6/2026
工廠前置作業時間：: 16

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$109.00	HK$109.00
	HK$66.09	HK$660.90
	HK$56.64	HK$6,796.80
	HK$54.66	HK$27,876.60

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	Wolfspeed
產品類型:	碳化矽MOSFET
RoHS:
REACH - SVHC:
安裝風格:	Through Hole
封裝/外殼:	TO-247-4
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	1.2 kV
Id - C連續漏極電流:	63 A
Rds On - 漏-源電阻:	32 mOhms
Vgs - 閘極-源極電壓:	- 4 V, + 15 V
Vgs th - 門源門限電壓 :	3.6 V
Qg - 閘極充電:	118 nC
最低工作溫度:	- 40 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	283 W
通道模式:	Enhancement
品牌:	Wolfspeed
配置:	Single
下降時間:	9 ns
互導 - 最小值:	27 S
封裝:	Tube
產品:	MOSFETs
產品類型:	SiC MOSFETS
上升時間:	18 ns
原廠包裝數量:	30
子類別:	Transistors
技術:	SiC
標準斷開延遲時間:	32 ns
標準開啟延遲時間:	25 ns
每件重量:	6 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

C3M0032120K 規格書

PCN

此功能需要啟用JavaScript。

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

1200V Silicon Carbide Schottky Diodes

Wolfspeed 1200V Silicon Carbide Schottky Diodes feature Merged PiN Schottky (MPS) technology and offer greater robustness and reliability than standard Schottky diodes. These Wolfspeed 1200V diodes come in various packages that can be paralleled without the risk of thermal runaway. The diodes are ideal for solar inverters, switch mode power supplies (SMPS), uninterruptible power supplies (UPS), and AC/DC converters.

1.200 V碳化矽功率MOSFET

Wolfspeed 1200V碳化矽功率MOSFET設定了性能、堅固性和易用性設定標準。Wolfspeed MOSFET具有快速開關和低開關損耗功能，與矽MOSFET和IGBT現有產品相比，可確保系統效率、功率密度和整體BOM成本顯著提高。

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

SiC C3M MOSFETs

Wolfspeed SiC C3M MOSFETs enable higher switching frequencies and reduce inductor, capacitor, filter, and transformer component sizes. The Wolfspeed SiC C3M MOSFETs have higher system efficiency and reduced cooling requirements. The MOSFETs also increase power density and system switching frequency.