NVMFSC0D9N04CL

onsemi
863-NVMFSC0D9N04CL
NVMFSC0D9N04CL

製造商：

說明：
MOSFET 40V T6 LL IN 5X6 DUALCOOL

規格書:
ECAD模型:
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庫存量: 3,648

庫存：
3,648 可立即送貨
工廠前置作業時間：
19 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個3000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$49.48 HK$49.48
HK$34.36 HK$343.60
HK$24.82 HK$2,482.00
HK$24.74 HK$12,370.00
HK$23.43 HK$23,430.00
完整捲（訂購多個3000）
HK$23.10 HK$69,300.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
onsemi
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DFN-8
N-Channel
1 Channel
40 V
316 A
870 uOhms
- 20 V, 20 V
3.5 V
86 nC
- 55 C
+ 175 C
166 W
Enhancement
AEC-Q101
Reel
Cut Tape
MouseReel
品牌: onsemi
配置: Single
下降時間: 170 ns
產品類型: MOSFETs
上升時間: 160 ns
系列: NVMFSC0D9N04CL
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 220 ns
標準開啟延遲時間: 54 ns
每件重量: 161.193 mg
找到產品:
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所選屬性: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

NVMx & NVTx Power MOSFETs

onsemi NVMx and NVTx Power MOSFETs are AEC−Q101 Qualified and offer compact and efficient solutions for automotive applications. NVMx and NVTx Power MOSFETs offer Low RDS(on) to minimize conduction losses and low QG and Capacitance to minimize driver losses. These onsemi single N-Channel MOSFETs are housed in a compact, SO-8FL, and WDFN8 packages and are Pb−Free, Halogen Free/BFR Free, and RoHS Compliant.

N-Channel 40V & 60V Automotive Power MOSFETs

onsemi NVMFSCx Automotive Power 40V and 60V MOSFETs are available in 5mm x 6mm dual-sided cooled packages ideal for compact and efficient designs. The single N-Channel devices feature 1.5mΩ and 0.9mΩ RDS(on) drain-source on-resistance to minimize conductive losses. The MOSFETs includes a wettable flank option available for enhanced optical inspection. The devices are also AEC-Q101-qualified and PPAP-capable, making them suitable for automotive applications.

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

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