NDSH50120C

onsemi
863-NDSH50120C
NDSH50120C

製造商：

說明：
碳化矽肖特基二極管 SIC DIODE GEN2.0 1200V TO

規格書:
ECAD模型:
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庫存量: 463

庫存：
463 可立即送貨
工廠前置作業時間：
15 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$161.69 HK$161.69
HK$114.67 HK$1,146.70
HK$112.04 HK$11,204.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 碳化矽肖特基二極管
RoHS:  
REACH - SVHC:
Through Hole
TO-247-2
Single
50 A
1.2 kV
1.4 V
231 A
200 uA
- 55 C
+ 175 C
NDSH50120C
Tube
品牌: onsemi
組裝國家: Not Available
擴散國: Not Available
原產國: CN
Pd - 功率消耗 : 375 W
產品類型: SiC Schottky Diodes
原廠包裝數量: 450
子類別: Diodes & Rectifiers
公司名稱: EliteSiC
Vr - 反向電壓: 1.2 kV
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所選屬性: 0

規格書

PCN

CNHTS:
8541100000
USHTS:
8541100080
TARIC:
8541100000
ECCN:
EAR99

儲能解決方案

安森美 (onsemi) 儲能解決方案可捕獲一次產生的能量，供日後使用。這包括將能量從難以儲存的形式轉換為更方便或更經濟的儲存形式。添加電池可以儲存額外的電力，以便在需要時使用。

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D3 EliteSiC Diodes

onsemi D3 EliteSiC Diodes are a solution for applications requiring high-power PFC and output rectification. The onsemi D3 has a maximum voltage rating of 1200V. These diodes come in two package options, TO-247-2LD and TO-247-3LD, providing flexibility for various designs. The D3 EliteSiC Diodes are optimized for high-temperature operation with low series-resistance temperature dependency, ensuring consistent and reliable performance even under extreme conditions.

NDSH50120C Silicon Carbide (SiC) Diodes

onsemi NDSH50120C Silicon Carbide (SiC) Diodes provide superior switching performance and higher reliability than silicon. The onsemi NDSH50120C features no reverse recovery current, temperature-independent switching characteristics, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, increased power density, reduced EMI, and reduced system size and cost.

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