NCV57001FDWR2G

onsemi
863-NCV57001FDWR2G
NCV57001FDWR2G

製造商:

說明:
電氣隔離式閘極驅動器 ISOLATED HIGH CURRENT IGBT GATE DRIVER WITH FAST STO

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 1,187

庫存:
1,187 可立即送貨
工廠前置作業時間:
26 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$36.25 HK$36.25
HK$21.04 HK$210.40
HK$20.88 HK$522.00
HK$19.23 HK$1,923.00
完整捲(訂購多個1000)
HK$19.15 HK$19,150.00
HK$18.50 HK$37,000.00
HK$18.41 HK$92,050.00

商品屬性 屬性值 選擇屬性
onsemi
產品類型: 電氣隔離式閘極驅動器
RoHS:  
NCV57001FDWR2G
SMD/SMT
- 40 C
+ 125 C
10 ns
15 ns
Reel
Cut Tape
品牌: onsemi
配置: Inverting, Non-Inverting
驅動器數: 1 Driver
輸出數: 1 Output
輸出電流: 4 A
產品: IGBT, MOSFET Gate Drivers
產品類型: Galvanically Isolated Gate Drivers
原廠包裝數量: 1000
子類別: PMIC - Power Management ICs
電源電壓 - 最大值: 5 V
電源電壓 - 最小值: 3.3 V
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

CNHTS:
8542399000
USHTS:
8542390090
ECCN:
EAR99

將閘極驅動器與EliteSiC MOSFET搭配使用

電動車充電、能源儲存、不斷電系統 (UPS) 和太陽能等能源基礎設施應用正在將系統功率推至數百千瓦,甚至兆瓦等級。這些高功率應用採用半橋、全橋和三相拓撲,為逆變器和BLDC提供多達6個開關的工作週期。視功率等級和開關速度而定,系統設計人員需要包括矽、IGBT和SiC等各種不同的開關技術來滿足其應用要求。

NCV57001F IGBT Gate Driver

onsemi NCV57001F IGBT Gate Driver is a high-current single-channel IGBT driver with internal galvanic isolation designed for high system efficiency and reliability. This gate driver features complementary inputs, open-drain FAULT, and Ready outputs, active Miller clamp, accurate UVLOs, DESAT protection, and soft turn-off at DESAT. onsemi NCV57001F IGBT Gate Driver accommodates 5V and 3.3V signals on the input side and a wide bias voltage range on the driver side, including negative voltage capability. This gate driver provides >5kVrms (UL1577 rating) galvanic isolation and >1200Viorm (working voltage) capabilities. Typical applications include automotive power supplies, hybrid/electric vehicle (HEV/EV) powertrains, BSG inverters, and positive temperature coefficient (PTC) heaters.