TK9J90E,S1E

Toshiba
757-TK9J90ES1E
TK9J90E,S1E

製造商:

說明:
MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 3,224

庫存:
3,224 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$32.22 HK$32.22
HK$18.50 HK$185.00
HK$15.12 HK$1,512.00
HK$12.33 HK$6,165.00
HK$11.51 HK$11,510.00

商品屬性 屬性值 選擇屬性
Toshiba
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-3P
N-Channel
1 Channel
900 V
9 A
1.3 Ohms
- 30 V, 30 V
2.5 V
46 nC
- 55 C
+ 150 C
250 W
Enhancement
MOSVIII
Tray
品牌: Toshiba
配置: Single
下降時間: 35 ns
產品類型: MOSFETs
上升時間: 40 ns
系列: TK9J90E
原廠包裝數量: 25
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 140 ns
標準開啟延遲時間: 80 ns
每件重量: 1.600 g
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

π-MOS VIII MOSFETs

Toshiba π-MOS VIII MOSFETs are 10V gate drive single N-channel devices based on the Toshiba eighth-generation planar semiconductor process, which combines high levels of cell integration with optimized cell design. The technology supports reduced gate charge and capacitance compared to prior generations without losing the benefits of low RDS(ON). Available with 800V and 900V ratings, these MOSFETs target applications such as flyback converters in LED lighting, supplementary power supplies, and other circuits that require current switching below 5.0A. These devices are offered in a standard TO-220 through-hole form factor and a surface-mounted DPAK package.