CSD17483F4

Texas Instruments
595-CSD17483F4
CSD17483F4

製造商:

說明:
MOSFET 30V N-CH Pwr MOSFET A 595-CSD17483F4T A 595-CSD17483F4T

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 13,515

庫存:
13,515 可立即送貨
工廠前置作業時間:
12 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個3000)

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™
HK$3.12 HK$3.12
HK$1.94 HK$19.40
HK$1.22 HK$122.00
HK$0.912 HK$456.00
HK$0.806 HK$806.00
完整捲(訂購多個3000)
HK$0.674 HK$2,022.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

備用包裝

製造商 元件編號:
包裝:
Reel, Cut Tape, MouseReel
供貨情況:
庫存量
價格:
HK$11.34
最小值:
1

相似產品

Texas Instruments CSD17483F4T
Texas Instruments
MOSFET 30V N-Ch FemtoFET MO SFET A 595-CSD17483 A 595-CSD17483F4

商品屬性 屬性值 選擇屬性
Texas Instruments
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
PICOSTAR-3
N-Channel
1 Channel
30 V
1.5 A
240 mOhms
- 8 V, 8 V
650 mV
1.01 nC
- 55 C
+ 150 C
500 mW
Enhancement
FemtoFET
Reel
Cut Tape
MouseReel
品牌: Texas Instruments
配置: Single
下降時間: 3.4 ns
互導 - 最小值: 2.4 S
產品類型: MOSFETs
上升時間: 1.3 ns
系列: CSD17483F4
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 10.6 ns
標準開啟延遲時間: 3.3 ns
每件重量: 0.400 mg
找到產品:
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所選屬性: 0

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CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210095
JPHTS:
854121000
KRHTS:
8541299000
TARIC:
8541210000
MXHTS:
8541210100
ECCN:
EAR99

CSD17483F4 FemtoFET MOSFET

Texas Instruments CSD17483F4 FemtoFET MOSFET is built using FemtoFET technology and is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

FemtoFET Power MOSFETs

Texas Instruments FemtoFET Power MOSFETs offer an ultra small footprint (0402 case size) with ultra-low resistance (70% less than competitors). These MOSFETs include ultra low Qg, Qgd specifications and have an optimized ESD rating. They are available in a land grid array (LGA) package. This package maximizes silicon content which makes them ideal for space-constrained applications. These power MOSFETs offer low power dissipation and low switching losses for improved light load performance. Typical applications for these devices include handheld, mobile, load switching, general purpose switching, and battery applications.