AFE7728DIABJ

Texas Instruments
595-AFE7728DIABJ
AFE7728DIABJ

製造商:

說明:
RF收發器 Dual-channel RF tran sceiver with dual f

ECAD模型:
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供貨情況

庫存:
暫無庫存
工廠前置作業時間:
18 週 工廠預計生產時間。
最少: 90   多個: 90
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$15,489.93 HK$1,394,093.70

商品屬性 屬性值 選擇屬性
Texas Instruments
產品類型: RF收發器
付運限制:
 此產品可能需要額外文件才能出口至美國境外。
RoHS:  
Multiband
600 MHz to 6 GHz
29.5 Gb/s
- 40 C
+ 85 C
FCBGA-400
Tray
品牌: Texas Instruments
組裝國家: Not Available
擴散國: Not Available
原產國: Not Available
尺寸: 17 mm x 17 mm
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: RF Transceiver
系列: AFE7728D
原廠包裝數量: 90
子類別: Wireless & RF Integrated Circuits
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所選屬性: 0

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USHTS:
8542390010
MXHTS:
8542399999
ECCN:
3A001.A.2.A

AFE77x8D/AFE7769D RF Transceivers

Texas Instruments AFE77x8D/AFE7769D Quad/Dual Channel RF Transceivers are pin-compatible, high-performance, multichannel transceivers. These integrate four (AFE7768D/AFE7769D) or two (AFE7728D) direct up-conversion transmitter chains and four (AFE7768D/AFE7769D) or two (AFE7728D) direct down-conversion receiver chains. The devices also have two wideband RF sampling digitizing auxiliary chains (feedback paths) and a low-power Digital Pre-Distortion (DPD) engine for Power Amplifier (PA) linearization. The high dynamic range of the transmitter and receiver chains enables wireless base stations to transmit and receive 2G, 3G, 4G, and 5G signals. The integrated Crest Factor Reduction (CFR) unit helps reduce the input signal's Peak-to-Average Ratio (PAR) for more efficient transmission through the Power Amplifier. The integrated hardware accelerated DPD estimator and corrector of the Texas Instruments AFE77x8D/AFE7769D provides a flexible and efficient DPD solution for PA linearization. The integrated DPD engine corrects the distortion due to PA nonlinearity for signals up to 200MHz (AFE7728D/AFE7768D)/300MHz (AFE7769D) instantaneous bandwidth and within up to 650MHz (AFE7728D/AFE7768D)/730MHz (AFE7769D) DPD expanded bandwidth. A dedicated GaN corrector addresses the long-term nonlinear memory effects due to the charge trapping of GaN PAs.