STW62N65M5

STMicroelectronics
511-STW62N65M5
STW62N65M5

製造商：

說明：
MOSFET N-Ch 650V 46A Auto 0.041 Ohm MDMesh M5
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在途量:
1,200
預期26/2/2026
工廠前置作業時間：
18
週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$110.64 HK$110.64
HK$67.16 HK$671.60
HK$63.79 HK$6,379.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
710 V
46 A
41 mOhms
- 25 V, 25 V
4 V
142 nC
- 55 C
+ 150 C
330 W
Enhancement
AEC-Q101
MDmesh
Tube
品牌: STMicroelectronics
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: CN
下降時間: 14 ns
產品類型: MOSFETs
上升時間: 11 ns
系列: Mdmesh M5
原廠包裝數量: 600
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 8 ns
標準開啟延遲時間: 101 ns
每件重量: 6 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. 

Automotive MDmesh V Power MOSFET

STMicroelectronics Automotive MDmesh™ V Power MOSFET is the industry’s first 650V AEC-Q101 automotive-qualified MOSFETs in the popular TO-247 package. The 650V rating provides a greater safety margin when exposed to high-voltage spikes, enhancing the reliability of automotive power and control modules. This device offers extremely low on-resistance (RDS(on)) as low as 0.032Ω, combined with the compact TO-247 outline, enhances system energy efficiency and power density. Gate charge (Qg) and input capacitance are also low, resulting in an outstanding Qg x RDS(on) figure of merit (FOM) with high switching performance and efficiency.

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