似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

STW40N60M2

Name: STMicroelectronics STW40N60M2
Brand: STMicroelectronics
SKU: 511-STW40N60M2
Price: 41.68 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

511-STW40N60M2

製造商編號：

STW40N60M2

製造商：

STMicroelectronics

說明：

MOSFET N-chanel 600 V 0.078 Ohm typ 34 A

完成您的設計

規格書:

STW40N60M2 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於STMicroelectronics STW40N60M2的資訊

庫存量: 1,088

庫存：: 1,088 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 18 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$41.68	HK$41.68
	HK$25.32	HK$253.20
	HK$22.03	HK$2,203.00
	HK$19.89	HK$11,934.00
	HK$19.40	HK$23,280.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	34 A
Rds On - 漏-源電阻:	88 mOhms
Vgs - 閘極-源極電壓:	- 25 V, 25 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	57 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	250 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
組裝國家:	SG
擴散國:	Not Available
原產國:	CN
下降時間:	11 ns
產品類型:	MOSFETs
上升時間:	13.5 ns
系列:	STW40N60M2
原廠包裝數量:	600
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	96 ns
標準開啟延遲時間:	20.5 ns
每件重量:	6 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

STW40N60M2 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.