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STW24N60DM2

Name: STMicroelectronics STW24N60DM2
Brand: STMicroelectronics
SKU: 511-STW24N60DM2
Price: 35.67 HKD
Availability: InStock

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Mouser 編號：

511-STW24N60DM2

製造商編號：

STW24N60DM2

製造商：

STMicroelectronics

說明：

MOSFET N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2

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規格書:

STW24N60DM2 規格書 (PDF)

ECAD模型:

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庫存量: 485

庫存：: 485 可立即送貨

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工廠前置作業時間：: 16 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$35.67	HK$35.67
	HK$23.84	HK$238.40
	HK$18.33	HK$1,833.00
	HK$16.19	HK$9,714.00
	HK$13.89	HK$16,668.00
	HK$13.40	HK$40,200.00
	HK$13.15	HK$71,010.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
REACH - SVHC:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	600 V
Id - C連續漏極電流:	18 A
Rds On - 漏-源電阻:	200 mOhms
Vgs - 閘極-源極電壓:	- 25 V, 25 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	29 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	150 W
通道模式:	Enhancement
公司名稱:	FDmesh
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
下降時間:	15 ns
產品類型:	MOSFETs
上升時間:	8.7 ns
系列:	STW24N60DM2
原廠包裝數量:	600
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	60 ns
標準開啟延遲時間:	15 ns
每件重量:	6 g

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篩選文檔:

規格書

STW24N60DM2 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Q_rr, t_rr) and shows 20% lower R_DS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.