STP28NM60ND

STMicroelectronics
511-STP28NM60ND
STP28NM60ND

製造商:

說明:
MOSFET N-channel 600 V 0 120 Ohm typ 24 A

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 990

庫存:
990 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$49.07 HK$49.07
HK$26.14 HK$261.40
HK$24.58 HK$2,458.00
HK$22.61 HK$11,305.00
HK$21.04 HK$21,040.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
23 A
150 mOhms
- 25 V, 25 V
4 V
62.5 nC
- 55 C
+ 150 C
190 W
Enhancement
Tube
品牌: STMicroelectronics
配置: Single
下降時間: 27 ns
產品類型: MOSFETs
上升時間: 21.5 ns
系列: STP28NM60ND
原廠包裝數量: 1000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 92 ns
標準開啟延遲時間: 23.5 ns
每件重量: 2 g
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

N-Channel FDmesh Power MOSFETs

STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.