STL24N60M2

STMicroelectronics
511-STL24N60M2
STL24N60M2

製造商：

說明：
MOSFET N-CH 600V 0.186Ohm typ. 18A MDmesh M2
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規格書:
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庫存量: 2,130

庫存：
2,130 可立即送貨
工廠前置作業時間：
14 週 工廠預計生產時間數量大於所顯示的數量。
數量超過2130會受到最小訂單要求的限制。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個3000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$31.32 HK$31.32
HK$20.55 HK$205.50
HK$14.39 HK$1,439.00
HK$12.82 HK$6,410.00
HK$12.74 HK$12,740.00
完整捲（訂購多個3000）
HK$10.36 HK$31,080.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
PowerFLAT-8x8-5
N-Channel
1 Channel
600 V
18 A
186 mOhms
- 25 V, 25 V
3 V
29 nC
- 55 C
+ 150 C
125 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
品牌: STMicroelectronics
配置: Single
下降時間: 15 ns
濕度敏感: Yes
產品類型: MOSFETs
上升時間: 9 ns
系列: STL24N60M2
原廠包裝數量: 3000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 60 ns
標準開啟延遲時間: 14 ns
每件重量: 180 mg
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

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