STH150N10F7-2

STMicroelectronics
511-STH150N10F7-2
STH150N10F7-2

製造商：

說明：
MOSFET N-channel 100 V, 3,4mOhm typ., 110 A, STripFET F7 Power MOSFET in a H2PAK-2 pack
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庫存量: 225

庫存：
225 可立即送貨
工廠前置作業時間：
26 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個1000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$33.29 HK$33.29
HK$21.87 HK$218.70
HK$15.45 HK$1,545.00
HK$13.89 HK$6,945.00
完整捲（訂購多個1000）
HK$11.67 HK$11,670.00
HK$11.26 HK$22,520.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
H2PAK-2
N-Channel
1 Channel
100 V
110 A
3.9 mOhms
- 20 V, 20 V
4.5 V
117 nC
- 55 C
+ 175 C
250 W
Enhancement
STripFET
Reel
Cut Tape
MouseReel
品牌: STMicroelectronics
配置: Single
下降時間: 33 ns
產品類型: MOSFETs
上升時間: 57 ns
系列: STH150N10F7-2
原廠包裝數量: 1000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 72 ns
標準開啟延遲時間: 33 ns
每件重量: 4 g
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所選屬性: 0 

                        
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Stock on hand has no manufacture warranty.

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5-1013-36

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

STripFET™ F7 Power MOSFETs

STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. STMicroelectronics STripFET F7 feature high avalanche ruggedness.

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