STGYA50H120DF2

STMicroelectronics
511-STGYA50H120DF2
STGYA50H120DF2

製造商：

說明：
IGBT Trench gate field-stop 1200 V 50 A high-speed H series IGBT
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規格書:
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庫存量: 560

庫存：
560 可立即送貨
工廠前置作業時間：
14 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$50.06 HK$50.06
HK$35.76 HK$357.60
HK$31.40 HK$3,768.00
HK$30.66 HK$15,636.60
HK$28.69 HK$29,263.80

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
Through Hole
Single
1.2 kV
2.1 V
- 20 V, 20 V
100 A
535 W
- 55 C
+ 175 C
Tube
品牌: STMicroelectronics
產品類型: IGBT Transistors
原廠包裝數量: 30
子類別: IGBTs
每件重量: 4.430 g
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

1200V H Series Trench Gate Field-Stop IGBTs

STMicroelectronics 1200V H Series Trench Gate Field-Stop IGBTs represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. With ST's advanced Trench-Gate Field-Stop High-Speed technology, these IGBTs have a 5μs minimum short circuit withstand time at TJ=150°C, minimal collector current turn off tail, and very low saturation voltage (VCE(sat)) down to 2.1V (typical) to minimize energy losses during switching and when turned on. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

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