似乎你已停用瀏覽器的JavaScript。除非你登入，否則此頁面上的某些功能將無法使用。

STGWT40H65DFB

Name: STMicroelectronics STGWT40H65DFB
Brand: STMicroelectronics
SKU: 511-STGWT40H65DFB
Price: 36.74 HKD
Availability: OutOfStock

影像僅供參考
請參閱產品規格

Mouser 編號：

511-STGWT40H65DFB

製造商編號：

STGWT40H65DFB

製造商：

STMicroelectronics

說明：

IGBT 650V 40A HSpd trench gate field-stop IGB

完成您的設計

規格書:

STGWT40H65DFB 規格書 (PDF)

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於STMicroelectronics STGWT40H65DFB的資訊

供貨情況

庫存：: 暫無庫存

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 14 週工廠預計生產時間。

輸入數量：

最少： 600 多個： 300

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$36.74	HK$36.74
	HK$20.47	HK$204.70
	HK$16.85	HK$1,685.00
	HK$14.88	HK$8,928.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	IGBT
RoHS:
技術:	Si
封裝/外殼:	TO-3P
安裝風格:	Through Hole
配置:	Single
集電極-發射極最大電壓VCEO:	650 V
集電極-發射極飽和電壓:	1.6 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	80 A
Pd - 功率消耗 :	283 W
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	STGWT40H65DFB
封裝:	Tube
品牌:	STMicroelectronics
集電極最大連續電流Ic :	40 A
組裝國家:	Not Available
擴散國:	Not Available
原產國:	KR
柵射極漏電電流:	250 nA
產品類型:	IGBT Transistors
原廠包裝數量:	300
子類別:	IGBTs
每件重量:	6.756 g

找到產品:

若要顯示類似商品，請選取至少一個核選方塊

至少選中以上一個核取方塊以顯示在此類別中類似的產品。

所選屬性: 0

篩選文檔:

規格書

STGWT40H65DFB 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.