STGWA60H65DFB

STMicroelectronics
511-STGWA60H65DFB
STGWA60H65DFB

製造商:

說明:
IGBT Trench gate field-stop IGBT, HB series 650 V, 60 A high speed

ECAD模型:
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供貨情況

庫存:
0

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在途量:
591
預期1/4/2026
工廠前置作業時間:
14
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$36.74 HK$36.74
HK$24.50 HK$245.00
HK$18.91 HK$1,891.00
HK$16.77 HK$10,062.00
HK$14.30 HK$17,160.00
HK$13.81 HK$41,430.00
HK$13.56 HK$73,224.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
2 V
- 20 V, 20 V
80 A
375 W
- 55 C
+ 175 C
STGWA60H65DFB
Tube
品牌: STMicroelectronics
集電極最大連續電流Ic : 80 A
柵射極漏電電流: 250 nA
產品類型: IGBT Transistors
原廠包裝數量: 600
子類別: IGBTs
每件重量: 38 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.