STGW8M120DF3

STMicroelectronics
511-STGW8M120DF3
STGW8M120DF3

製造商:

說明:
IGBT Trench gate field-stop IGBT, M series 1200 V, 8 A low loss

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 344

庫存:
344 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$38.31 HK$38.31
HK$25.32 HK$253.20
HK$19.81 HK$1,981.00
HK$17.59 HK$10,554.00
HK$15.04 HK$18,048.00
HK$14.14 HK$42,420.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
TO-247-3
Through Hole
Single
1.2 kV
1.85 V
- 20 V, 20 V
16 A
167 W
- 55 C
+ 175 C
M
Tube
品牌: STMicroelectronics
柵射極漏電電流: 250 uA
產品類型: IGBT Transistors
原廠包裝數量: 600
子類別: IGBTs
每件重量: 6 g
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.