STGW50H65DFB2-4

STMicroelectronics
511-STGW50H65DFB2-4
STGW50H65DFB2-4

製造商:

說明:
IGBT Trench gate field-stop, 650 V, 50 A, high-speed HB2 series IGBT in a TO247-4 pac

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 564

庫存:
564 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
數量超過564會受到最小訂單要求的限制。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$43.07 HK$43.07
HK$24.50 HK$245.00
HK$17.18 HK$1,718.00
HK$16.19 HK$9,714.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
86 A
272 W
- 55 C
+ 175 C
Tube
品牌: STMicroelectronics
產品類型: IGBT Transistors
原廠包裝數量: 600
子類別: IGBTs
每件重量: 4.430 g
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所選屬性: 0

USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.