STGW30H65FB

STMicroelectronics
511-STGW30H65FB
STGW30H65FB

製造商:

說明:
IGBT Trench gate field-stop 650 V, 30 A high speed HB series IGBT

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 90

庫存:
90
可立即送貨
在途量:
600
預期24/8/2026
工廠前置作業時間:
14
工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$33.95 HK$33.95
HK$19.07 HK$190.70
HK$13.15 HK$1,315.00
HK$12.17 HK$7,302.00
HK$11.84 HK$14,208.00
HK$11.43 HK$34,290.00
HK$11.34 HK$61,236.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
TO-247-3
Through Hole
Single
650 V
1.75 V
- 20 V, 20 V
30 A
260 W
- 55 C
+ 175 C
STGW30H65FB
Tube
品牌: STMicroelectronics
集電極最大連續電流Ic : 60 A
柵射極漏電電流: 250 nA
產品類型: IGBT Transistors
原廠包裝數量: 600
子類別: IGBTs
每件重量: 38 g
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

HB/HB2 Series Insulated-Gate Bipolar Transistors

STMicroelectronics HB/HB2 Series Insulated-Gate Bipolar Transistors (IGBTs) combine a very low saturation voltage (down to 1.6V) with a minimal collector current turn-off tail and a maximum operating temperature of 175°C. This enhances the efficiency of high-frequency applications (up to 100kHz) and leverages the advanced proprietary Trench Gate Field-Stop (TGFS) structure.