STGP6M65DF2

STMicroelectronics
511-STGP6M65DF2
STGP6M65DF2

製造商:

說明:
IGBT Trench gate field-stop IGBT M series, 650 V 6 A low loss

ECAD模型:
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供貨情況

庫存:
暫無庫存
工廠前置作業時間:
15 週 工廠預計生產時間。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$14.80 HK$14.80
HK$7.23 HK$72.30
HK$6.40 HK$640.00
HK$5.06 HK$2,530.00
HK$4.58 HK$4,580.00
HK$4.08 HK$8,160.00
HK$3.80 HK$19,000.00
HK$3.71 HK$37,100.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: IGBT
RoHS:  
Si
TO-220-3
Through Hole
Single
650 V
1.55 V
- 20 V, 20 V
12 A
88 W
- 55 C
+ 175 C
STGP6M65DF2
Tube
品牌: STMicroelectronics
集電極最大連續電流Ic : 12 A
柵射極漏電電流: +/- 250 uA
產品類型: IGBT Transistors
原廠包裝數量: 1000
子類別: IGBTs
每件重量: 1.800 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.