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STGB40V60F

Name: STMicroelectronics STGB40V60F
Brand: STMicroelectronics
SKU: 511-STGB40V60F
Price: 30.5 HKD
Availability: InStock

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請參閱產品規格

Mouser 編號：

511-STGB40V60F

製造商編號：

STGB40V60F

製造商：

STMicroelectronics

說明：

IGBT Trench gate field-stop IGBT, V series 600 V, 40 A very high speed

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規格書:

STGB40V60F 規格書 (PDF)

ECAD模型:

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庫存量: 74

庫存：: 74 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 15 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

包裝:

完整捲（訂購多個1000）

帶狀裁切

MouseReel™ (+HK$55.00)

Pricing (HKD)

數量	單價	總價
零卷 / MouseReel™ ^†
	HK$30.50	HK$30.50
	HK$19.89	HK$198.90
	HK$13.65	HK$1,365.00
	HK$12.00	HK$6,000.00
完整捲（訂購多個1000）
	HK$11.18	HK$11,180.00

† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	IGBT
RoHS:
技術:	Si
封裝/外殼:	D2PAK
安裝風格:	SMD/SMT
配置:	Single
集電極-發射極最大電壓VCEO:	600 V
集電極-發射極飽和電壓:	1.8 V
柵極發射機最大電壓:	- 20 V, 20 V
連續集電極電流在25 C:	80 A
Pd - 功率消耗 :	283 W
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
系列:	STGB40V60F
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	STMicroelectronics
組裝國家:	Not Available
擴散國:	Not Available
原產國:	CN
柵射極漏電電流:	250 nA
產品類型:	IGBT Transistors
原廠包裝數量:	1000
子類別:	IGBTs
每件重量:	2 g

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所選屬性: 0

篩選文檔:

規格書

STGB40V60F 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

IGBT V Series

STMicroelectronics 600V trench-gate field-stop very high-speed IGBT V series features the industry's lowest Eoff. Combined with a saturation voltage as low as 1.8V and a maximum operating junction temperature of 175°C, they enable increased system efficiency, higher switching frequencies (up to 120kHz), and simplified thermal and EMI design.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.