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STF8N80K5

Name: STMicroelectronics STF8N80K5
Brand: STMicroelectronics
SKU: 511-STF8N80K5
Price: 26.39 HKD
Availability: InStock

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Mouser 編號：

511-STF8N80K5

製造商編號：

STF8N80K5

製造商：

STMicroelectronics

說明：

MOSFET N-Ch 800V 0.76 Ohm 6AMDmesh K5

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規格書:

STF8N80K5 規格書 (PDF)

ECAD模型:

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庫存量: 13

庫存：: 13

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在途量:: 1,000

預期23/3/2026
工廠前置作業時間：: 14

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$26.39	HK$26.39
	HK$13.48	HK$134.80
	HK$12.17	HK$1,217.00
	HK$9.86	HK$4,930.00
	HK$9.29	HK$9,290.00
	HK$8.38	HK$16,760.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	800 V
Id - C連續漏極電流:	6 A
Rds On - 漏-源電阻:	950 mOhms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	4 V
Qg - 閘極充電:	16.5 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	25 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Tube
品牌:	STMicroelectronics
配置:	Single
下降時間:	20 ns
產品類型:	MOSFETs
上升時間:	14 ns
系列:	STF8N80K5
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	32 ns
標準開啟延遲時間:	12 ns
每件重量:	2 g

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篩選文檔:

規格書

STF8N80K5 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.