STF40N65M2

STMicroelectronics
511-STF40N65M2
STF40N65M2

製造商:

說明:
MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220FP package

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 1,102

庫存:
1,102 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$31.89 HK$31.89
HK$23.51 HK$235.10
HK$22.28 HK$2,228.00
HK$22.11 HK$11,055.00
HK$19.15 HK$19,150.00
HK$18.33 HK$36,660.00
10,000 報價

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
32 A
87 mOhms
- 25 V, 25 V
2 V
56.5 nC
- 55 C
+ 150 C
25 W
Enhancement
MDmesh
Tube
品牌: STMicroelectronics
配置: Single
下降時間: 12 ns
產品類型: MOSFETs
上升時間: 10 ns
系列: STF40N65M2
原廠包裝數量: 1000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 96.5 ns
標準開啟延遲時間: 15 ns
每件重量: 2 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.