STF28N60DM2

STMicroelectronics
511-STF28N60DM2
STF28N60DM2

製造商:

說明:
MOSFET N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in a TO-220FP packa

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 457

庫存:
457 可立即送貨
工廠前置作業時間:
16 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$32.80 HK$32.80
HK$21.45 HK$214.50
HK$15.78 HK$1,578.00
HK$14.06 HK$7,030.00
HK$12.00 HK$12,000.00
HK$11.34 HK$22,680.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
600 V
21 A
130 mOhms
- 25 V, 25 V
3 V
34 nC
- 55 C
+ 150 C
30 W
Enhancement
MDmesh
Tube
品牌: STMicroelectronics
配置: Single
下降時間: 9.3 ns
產品類型: MOSFETs
上升時間: 7.3 ns
系列: STF28N60DM2
原廠包裝數量: 1000
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 53 ns
標準開啟延遲時間: 16 ns
每件重量: 2 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

N-Channel FDmesh Power MOSFETs

STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.