STF11N65M5

STMicroelectronics
511-STF11N65M5
STF11N65M5

製造商：

說明：
MOSFET N-Ch 650V 0.43 Ohm MDmesh M5 710 VDSS
完成您的設計

規格書:
ECAD模型:
下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。
更多資訊
瞭解更多關於STMicroelectronics STF11N65M5的資訊

庫存量: 441

庫存：
441 可立即送貨
工廠前置作業時間：
14 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$21.37 HK$21.37
HK$13.81 HK$138.10
HK$9.86 HK$986.00
HK$8.22 HK$4,110.00
HK$7.09 HK$7,090.00
HK$6.73 HK$13,460.00
HK$6.51 HK$32,550.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
9 A
480 mOhms
- 25 V, 25 V
3 V
17 nC
- 55 C
+ 150 C
85 W
Enhancement
MDmesh
Tube
品牌: STMicroelectronics
配置: Single
產品類型: MOSFETs
系列: Mdmesh M5
原廠包裝數量: 1000
子類別: Transistors
晶體管類型: 1 N-Channel
每件重量: 2 g
找到產品:
若要顯示類似商品，請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding RDS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules. 

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

發生意外的錯誤。


有問題嗎？ 請瀏覽幫助中心。
有關特定訂單的問題，請登入您的帳戶。

如有其他問題，請致電800-346-6873或發送郵件至 help@mouser.com 與我們聯絡。