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STE145N65M5

Name: STMicroelectronics STE145N65M5
Brand: STMicroelectronics
SKU: 511-STE145N65M5
Price: 261.64 HKD
Availability: OutOfStock

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Mouser 編號：

511-STE145N65M5

製造商編號：

STE145N65M5

製造商：

STMicroelectronics

說明：

MOSFET模組 N-channel 650 V, 0.012 Ohm typ., 143 A MDmesh M5 Power MOSFET in an ISOTOP packa

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規格書:

STE145N65M5 規格書 (PDF)

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在途量:: 400

預期16/3/2026

400

預期27/4/2026
工廠前置作業時間：: 16

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$261.64	HK$261.64
	HK$223.17	HK$2,231.70
	HK$195.23	HK$19,523.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET模組
RoHS:
技術:	Si
安裝風格:	Screw Mount
封裝/外殼:	ISOTOP
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	143 A
Rds On - 漏-源電阻:	15 mOhms
Vgs - 閘極-源極電壓:	- 25 V, + 25 V
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
系列:	Mdmesh M5
封裝:	Bulk
品牌:	STMicroelectronics
配置:	Single
產品類型:	MOSFET Modules
原廠包裝數量:	100
子類別:	Discrete and Power Modules
公司名稱:	MDmesh
類型:	MOSFET
Vr - 反向電壓:	650 V
每件重量:	28.200 g

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所選屬性: 0

篩選文檔:

規格書

STE145N65M5 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R_DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.