STD16N65M2

STMicroelectronics
511-STD16N65M2
STD16N65M2

製造商：

說明：
MOSFET N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in DPAK package
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庫存量: 2,734

庫存：
2,734 可立即送貨
工廠前置作業時間：
14 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個2500）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$23.34 HK$23.34
HK$15.12 HK$151.20
HK$10.44 HK$1,044.00
HK$8.55 HK$4,275.00
HK$7.88 HK$7,880.00
完整捲（訂購多個2500）
HK$7.04 HK$17,600.00
HK$6.96 HK$34,800.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
650 V
11 A
320 mOhms
- 25 V, 25 V
2 V
19.5 nC
- 55 C
+ 150 C
110 W
Enhancement
MDmesh
Reel
Cut Tape
MouseReel
品牌: STMicroelectronics
配置: Single
下降時間: 11.3 ns
產品類型: MOSFETs
上升時間: 8.2 ns
系列: STD16N65M2
原廠包裝數量: 2500
子類別: Transistors
標準斷開延遲時間: 36 ns
標準開啟延遲時間: 11.3 ns
每件重量: 330 mg
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between RDS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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