STB47N50DM6AG

STMicroelectronics
511-STB47N50DM6AG
STB47N50DM6AG

製造商:

說明:
MOSFET Automotive-grade N-channel 500 V, 61 mOhm typ., 38 A MDmesh DM6 Power MOSFET in

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 995

庫存:
995 可立即送貨
工廠前置作業時間:
14 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$53.59 HK$53.59
HK$37.15 HK$371.50
HK$27.37 HK$2,737.00
完整捲(訂購多個1000)
HK$25.56 HK$25,560.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
500 V
38 A
71 mOhms
- 25 V, 25 V
3 V
57 nC
- 55 C
+ 150 C
250 W
Enhancement
AEC-Q101
MDmesh
Reel
Cut Tape
品牌: STMicroelectronics
配置: Single
產品類型: MOSFETs
系列: STB47N50DM6AG
原廠包裝數量: 1000
子類別: Transistors
每件重量: 4 g
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所選屬性: 0

CNHTS:
8541290000
USHTS:
8541290065
TARIC:
8541290000
ECCN:
EAR99

MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Qrr) and recovery time (trr), combined with low RDS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.