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STB34N65M5

Name: STMicroelectronics STB34N65M5
Brand: STMicroelectronics
SKU: 511-STB34N65M5
Price: 21.78 HKD
Availability: OutOfStock

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Mouser 編號：

511-STB34N65M5

製造商編號：

STB34N65M5

製造商：

STMicroelectronics

說明：

MOSFET N-Ch 650V 0.098 Ohm 29 A MDmesh M5

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規格書:

STB34N65M5 規格書 (PDF)

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庫存：: 暫無庫存

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工廠前置作業時間：: 14 週工廠預計生產時間。

輸入數量：

最少： 1000 多個： 1000

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

此產品免費航運

Pricing (HKD)

數量	單價	總價
完整捲（訂購多個1000）
	HK$21.78	HK$21,780.00

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-3 (TO-263-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	650 V
Id - C連續漏極電流:	18.3 A
Rds On - 漏-源電阻:	110 mOhms
Vgs - 閘極-源極電壓:	- 25 V, 25 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	62.5 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	190 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Reel
品牌:	STMicroelectronics
配置:	Single
產品類型:	MOSFETs
系列:	Mdmesh M5
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
每件重量:	4 g

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篩選文檔:

規格書

STB34N65M5 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541210000
MXHTS:: 85412999
ECCN:: EAR99

N-channel MDmesh V Power MOSFET

STMicroelectronics 550 and 650V MDmesh M5 series of super-junction Power MOSFETs offer outstanding R_DS(on) values to significantly reduce losses in line-voltage PFC circuits and power supplies. This in turn enables new generations of electronic products to offer greater energy savings, superior power density, and more compact applications. This new technology will help product designers tackle emerging challenges such as the high-efficiency targets of new eco-design directives, and will also benefit the renewable energy sector by saving vital watts normally lost in power-control modules.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.