STB24N60DM2

STMicroelectronics
511-STB24N60DM2
STB24N60DM2

製造商：

說明：
MOSFET N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package
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庫存量: 1,418

庫存：
1,418 可立即送貨
工廠前置作業時間：
16 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲（訂購多個1000）

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™ †
HK$30.74 HK$30.74
HK$20.14 HK$201.40
HK$14.14 HK$1,414.00
HK$12.49 HK$6,245.00
完整捲（訂購多個1000）
HK$11.67 HK$11,670.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
600 V
18 A
200 mOhms
- 25 V, 25 V
4 V
29 nC
- 55 C
+ 150 C
150 W
Enhancement
FDmesh
Reel
Cut Tape
MouseReel
品牌: STMicroelectronics
配置: Single
組裝國家: SG
擴散國: Not Available
原產國: SG
下降時間: 15 ns
產品類型: MOSFETs
上升時間: 8.7 ns
系列: STB24N60DM2
原廠包裝數量: 1000
子類別: Transistors
標準斷開延遲時間: 60 ns
標準開啟延遲時間: 15 ns
每件重量: 4 g
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

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