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STB20N95K5

Name: STMicroelectronics STB20N95K5
Brand: STMicroelectronics
SKU: 511-STB20N95K5
Price: 69.05 HKD
Availability: InStock

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請參閱產品規格

Mouser 編號：

511-STB20N95K5

製造商編號：

STB20N95K5

製造商：

STMicroelectronics

說明：

MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5

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規格書:

STB20N95K5 規格書 (PDF)

ECAD模型:

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庫存量: 1,518

庫存：: 1,518 可立即送貨

發生意外錯誤了。請稍後再試。
工廠前置作業時間：: 14 週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

包裝:

完整捲（訂購多個1000）

帶狀裁切

MouseReel™ (+HK$55.00)

Pricing (HKD)

數量	單價	總價
零卷 / MouseReel™ ^†
	HK$69.05	HK$69.05
	HK$47.43	HK$474.30
	HK$37.15	HK$3,715.00
	HK$37.07	HK$18,535.00
完整捲（訂購多個1000）
	HK$32.30	HK$32,300.00
	HK$30.25	HK$60,500.00

† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。 ↩

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商品屬性	屬性值	選擇屬性
製造商:	STMicroelectronics
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-3 (TO-263-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	950 V
Id - C連續漏極電流:	17.5 A
Rds On - 漏-源電阻:	330 mOhms
Vgs - 閘極-源極電壓:	- 30 V, 30 V
Vgs th - 門源門限電壓 :	3 V
Qg - 閘極充電:	48 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	250 W
通道模式:	Enhancement
公司名稱:	MDmesh
封裝:	Reel
封裝:	Cut Tape
封裝:	MouseReel
品牌:	STMicroelectronics
配置:	Single
產品類型:	MOSFETs
系列:	STB20N95K5
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
每件重量:	4 g

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所選屬性: 0

篩選文檔:

規格書

STB20N95K5 規格書 (PDF)

PCN

CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.