STB18NF30

STMicroelectronics
511-STB18NF30
STB18NF30

製造商:

說明:
MOSFET N-Ch 330V 18A MOS STripFET II D2PAK

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 267

庫存:
267 可立即送貨
工廠前置作業時間:
13 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
包裝:
完整捲(訂購多個1000)

Pricing (HKD)

數量 單價
總價
零卷 / MouseReel™
HK$26.63 HK$26.63
HK$17.34 HK$173.40
HK$13.23 HK$1,323.00
HK$10.36 HK$5,180.00
完整捲(訂購多個1000)
HK$9.04 HK$9,040.00
HK$8.38 HK$16,760.00
† HK$55.00 MouseReel™費用將加入您的購物車內並自動計算。所有MouseReel™訂單均不能取消和不能退換。

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
D2PAK-3 (TO-263-3)
N-Channel
1 Channel
330 V
18 A
180 mOhms
- 20 V, 20 V
2 V
44 nC
- 55 C
+ 175 C
150 W
Enhancement
AEC-Q100
STripFET
Reel
Cut Tape
MouseReel
品牌: STMicroelectronics
配置: Single
產品類型: MOSFETs
系列: STB18NF30
原廠包裝數量: 1000
子類別: Transistors
每件重量: 4 g
找到產品:
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所選屬性: 0

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8542319000
MXHTS:
85412999
ECCN:
EAR99

STripFET II™ Power MOSFETs

STMicroelectronics STripFET II™ Power MOSFETs are enhancement-mode MOSFETs that benefit from STMicroelectronics proprietary STripFET™ technology with a gate structure. The resulting STripFET™ Power MOSFET exhibits a high current and low RDS(on). These Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density. These STripFET™ Power MOSFETs are a well-established planar technology for high-efficiency, low-voltage systems.

STripFET Power MOSFETs

STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET technology with a new gate structure. The resulting STripFET Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, uninterruptible power supplies (UPS), DC/DC converters, induction heater vaporizers, and solar. STMicroelectronics STripFET Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses, and high power density.