SCT055H65G3AG

STMicroelectronics
511-SCT055H65G3AG
SCT055H65G3AG

製造商:

說明:
碳化矽MOSFET Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A

壽命週期:
新產品:
該製造商的新產品。
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供貨情況

庫存:
暫無庫存
工廠前置作業時間:
16 週 工廠預計生產時間。
最少: 1000   多個: 1000
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
完整捲(訂購多個1000)
HK$42.66 HK$42,660.00

商品屬性 屬性值 選擇屬性
STMicroelectronics
產品類型: 碳化矽MOSFET
RoHS:  
品牌: STMicroelectronics
封裝: Reel
產品類型: SiC MOSFETS
原廠包裝數量: 1000
子類別: Transistors
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所選屬性: 0

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance RDS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.