MT41K512M8DA-093:P

Micron
340-265839-TRAY
MT41K512M8DA-093:P

製造商:

說明:
DRAM DDR3 4Gbit 8 78/117TFBGA 1 CT

壽命週期:
向工廠驗證狀態:
壽命週期資訊不明確。獲取報價以驗證製造商對該部件編號的供貨情形。
ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

庫存量: 2,191

庫存:
2,191 可立即送貨
工廠前置作業時間:
53 週 工廠預計生產時間數量大於所顯示的數量。
數量超過2191會受到最小訂單要求的限制。
此產品已報告長備貨期。
最少: 1   多個: 1   上限: 2191
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$134.23 HK$134.23
HK$128.73 HK$1,287.30

商品屬性 屬性值 選擇屬性
Micron Technology
產品類型: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
8 bit
1.066 GHz
FBGA-78
512 M x 8
13.09 ns
1.283 V
1.45 V
0 C
+ 95 C
MT41K
Tray
品牌: Micron
濕度敏感: Yes
安裝風格: SMD/SMT
產品類型: DRAM
原廠包裝數量: 1440
子類別: Memory & Data Storage
每件重量: 1.233 g
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所選屬性: 0

                        
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CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

MT41x DDR3 SDRAMs

Alliance Memory MT41x DDR3 SDRAMs use double data rate architecture with an interface to transfer two data words per clock cycle at I/O pins. The MT41x DDR3's double data rate architecture is an 8n-prefetch architecture that helps to achieve high-speed operations. These SDRAMs operate from CK and CK# differential clock inputs. The MT41x DDR3 employs a burst-orientated approach to read and write with access starting at the selected location and continuing in a programmed sequence. These SDRAMs use READ and WRITE BL8 and BC4. The MT41x DDR3 SRAMs can operate concurrently due to their pipelined and multibank architecture. This helps in providing high bandwidth by hiding row precharge and activation time. These SDRAMs feature self-refresh mode, power-saving mode, and power-down mode.