CGHV96050F2

MACOM
941-CGHV96050F2
CGHV96050F2

製造商：

說明：
氮化鎵場效應管 GaN HEMT 7.9-9.6GHz, 50 Watt

規格書:
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此產品可能需要額外文件才能出口至美國境外。

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庫存：
0

您仍可購買此商品作為延期交貨訂單。

工廠前置作業時間：
26 週 工廠預計生產時間。
此產品已報告長備貨期。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:
此產品免費航運

Pricing (HKD)

數量 單價
總價
HK$8,106.73 HK$8,106.73
HK$7,174.91 HK$71,749.10

商品屬性 屬性值 選擇屬性
MACOM
產品類型: 氮化鎵場效應管
付運限制：
 此產品可能需要額外文件才能出口至美國境外。
RoHS:  
Screw Mount
440210
N-Channel
100 V
6 A
2.3 V
- 40 C
+ 150 C
品牌: MACOM
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: US
開發套件: CGHV96050F2-TB
增益: 10 dB
最大工作頻率: 9.6 GHz
最低工作頻率: 8.4 GHz
輸出功率: 50 W
封裝: Tray
產品: GaN HEMTs
產品類型: GaN FETs
原廠包裝數量: 10
子類別: Transistors
技術: GaN
晶體管類型: GaN HEMT
Vgs - 閘極-源極擊穿電壓: 3 V
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所選屬性: 0

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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
8542330996
KRHTS:
8532331000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
3A001.b.3.b.2

X-Band GaN HEMTs & MMICs

MACOM X-Band Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and Monolithic Microwave Integrated Circuits (MMICs) come with various solution platforms. That includes MMICs, internally matched GaN on SiC transistors (IM-FETs), and transistors. These multi-stage MMICs offer a variety of power levels, high gain, and high efficiency, while IM-FETs feature 50Ω building blocks in support of higher power systems. The transistors offer highly accurate modeling support that provides maximum flexibility to optimize amplifier design. The GaN has superior properties compared to silicon or gallium arsenide (GaAs), including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

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