IPD60R180CM8XTMA1

Infineon Technologies
726-IPD60R180CM8XTMA
IPD60R180CM8XTMA1

製造商：

說明：
MOSFET HIGH POWER_NEW

壽命週期:
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庫存量: 1,925

庫存：
1,925 可立即送貨
工廠前置作業時間：
8 週 工廠預計生產時間數量大於所顯示的數量。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$16.69 HK$16.69
HK$11.26 HK$112.60
HK$8.07 HK$807.00
HK$6.95 HK$3,475.00
HK$6.57 HK$6,570.00
完整捲（訂購多個2500）
HK$5.57 HK$13,925.00

商品屬性 屬性值 選擇屬性
Infineon
產品類型: MOSFET
RoHS:  
Si
SMD/SMT
TO-252-3
N-Channel
1 Channel
600 V
18 A
180 mOhms
- 20 V, 20 V
4.7 V
17 nC
- 55 C
+ 150 C
127 W
Enhancement
CoolMOS
Reel
Cut Tape
品牌: Infineon Technologies
配置: Single
下降時間: 12.8 ns
產品類型: MOSFETs
上升時間: 6 ns
系列: 600V CM8
原廠包裝數量: 2500
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 88.4 ns
標準開啟延遲時間: 17.2 ns
零件號別名: IPD60R180CM8 SP005578057
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所選屬性: 0

規格書

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CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99

CoolMOS™超結MOSFET

英飛淩CoolMOS功率電晶體具有快速開關SJ MOSFET的所有優勢。結合最新一代CoolMOS 7，英飛淩不斷在價格、性能和品質等方面樹立標杆。

650V CoolMOS™ CFD7A SJ Power MOSFETs

Infineon Technologies 650V CoolMOS™ CFD7A SJ Power MOSFETs address electric vehicle applications such as on-board chargers, HV-LV DC-DC converters, and auxiliary power supplies. Thanks to the improved cosmic radiation robustness, the CoolMOS CFD7A SJ Power MOSFETs allow higher battery voltages to be applied at a reliability rate equal to that of previous generations and other market offerings. CoolMOS CFD7A SJ Power MOSFETs ensure high-efficiency levels in hard- and resonant switching topologies, particularly at light load conditions. Higher switching frequencies at gate loss levels comparable to those of former generations are reached. The reduction in system weight and the smaller occupied space result in more compact designs.

CoolMOS™ 8 SJ MOSFETs

Infineon Technologies CoolMOS™ 8 SJ MOSFETs are high-voltage super-junction MOSFET technology solutions. The Infineon Technologies CoolMOS 8 has an integrated fast body diode and is ideal for diverse applications. The CoolMOS 8 enhances Infineon's wide-bandgap (WBG) portfolio as the successor to the 600V CoolMOS 7 MOSFET family.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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