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IPB60R105CFD7ATMA1

Name: Infineon IPB60R105CFD7ATMA1
Brand: Infineon Technologies
SKU: 726-IPB60R105CFD7ATM
Price: 38.96 HKD
Availability: OutOfStock

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請參閱產品規格

Mouser 編號：

726-IPB60R105CFD7ATM

製造商編號：

IPB60R105CFD7ATMA1

製造商：

Infineon Technologies

說明：

MOSFET HIGH POWER_NEW

規格書:

IPB60R105CFD7ATMA1 規格書 (PDF)

ECAD模型:

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庫存：: 0

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在途量:: 977

預期23/3/2026
工廠前置作業時間：: 12

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$38.96	HK$38.96
	HK$25.81	HK$258.10
	HK$18.33	HK$1,833.00
	HK$17.18	HK$8,590.00
完整捲（訂購多個1000）
	HK$16.03	HK$16,030.00

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	Infineon
產品類型:	MOSFET
RoHS:
REACH - SVHC:
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-3 (TO-263-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	600 V
Id - C連續漏極電流:	21 A
Rds On - 漏-源電阻:	105 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	4.5 V
Qg - 閘極充電:	42 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	106 W
通道模式:	Enhancement
封裝:	Reel
封裝:	Cut Tape
品牌:	Infineon Technologies
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	DE
下降時間:	8 ns
產品類型:	MOSFETs
上升時間:	17 ns
原廠包裝數量:	1000
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	94 ns
標準開啟延遲時間:	25 ns
零件號別名:	IPB60R105CFD7 SP002621134
每件重量:	6 g

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規格書

IPB60R105CFD7ATMA1 規格書 (PDF)

Product Catalogs

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CNHTS:: 8541290000
USHTS:: 8541290065
TARIC:: 8541290000
ECCN:: EAR99

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

CoolMOS™超結MOSFET

英飛淩CoolMOS功率電晶體具有快速開關SJ MOSFET的所有優勢。結合最新一代CoolMOS 7，英飛淩不斷在價格、性能和品質等方面樹立標杆。

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.