IMDQ75R050M2HXTMA1

Infineon Technologies
726-IMDQ75R050M2HXTM
IMDQ75R050M2HXTMA1

製造商:

說明:
碳化矽MOSFET SILICON CARBIDE MOSFET

壽命週期:
新產品:
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ECAD模型:
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庫存量: 140

庫存:
140 可立即送貨
工廠前置作業時間:
53 週 工廠預計生產時間數量大於所顯示的數量。
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$61.24 HK$61.24
HK$43.24 HK$432.40
HK$36.00 HK$3,600.00
HK$31.65 HK$15,825.00
完整捲(訂購多個750)
HK$28.52 HK$21,390.00
HK$28.44 HK$63,990.00
4,500 報價

商品屬性 屬性值 選擇屬性
Infineon
產品類型: 碳化矽MOSFET
RoHS:  
SMD/SMT
PG-HDSOP-22
N-Channel
1 Channel
750 V
36 A
65 mhms
- 7 V, + 23 V
5.6 V
24 nC
- 55 C
+ 175 C
148 W
Enhancement
CoolSiC
品牌: Infineon Technologies
配置: Single
下降時間: 5 ns
互導 - 最小值: 11 S
封裝: Reel
封裝: Cut Tape
產品: SiC MOSFET
產品類型: SiC MOSFETS
上升時間: 6 ns
系列: CoolSiC G2
原廠包裝數量: 750
子類別: Transistors
技術: SiC
晶體管類型: 1 N-Channel
標準斷開延遲時間: 13 ns
標準開啟延遲時間: 7 ns
零件號別名: IMDQ75R050M2H SP006089229
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所選屬性: 0

ECCN:
EAR99

CoolSiC™ 750V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETs are designed to offer high efficiency, robustness against parasitic turn-on for unipolar gate driving, and reliability. These MOSFETs offer superior performance in Totem Pole, ANPC, Vienna rectifier, and FCC hard-switching topologies. The reduction in Output Capacitance (Coss) enables the MOSFETs to operate at higher switching frequencies in Cycloconverter, CLLC, DAB, and LLC soft switching topologies. The CoolSiC™ 750V G2 MOSFETs feature up to 78mΩ maximum drain-source on-resistance and switching losses through improved gate control. These MOSFETs are automotive and industrial qualified. Typical applications include EV charging infrastructure, telecom, circuit breakers, solid state relays, solar PV inverters, and HV‑LV DC-DC converters.