IXTP90N075T2

IXYS
747-IXTP90N075T2
IXTP90N075T2

製造商：

說明：
MOSFET 90 Amps 75V 0.01 Rds

規格書:
ECAD模型:
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庫存：
暫無庫存
工廠前置作業時間：
23 週 工廠預計生產時間。
最少： 1   多個： 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$35.35 HK$35.35
HK$23.18 HK$231.80
HK$16.11 HK$1,611.00
HK$14.88 HK$7,440.00
HK$13.56 HK$13,560.00

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET
RoHS:  
Si
Through Hole
TO-220-3
N-Channel
1 Channel
75 V
90 A
10 mOhms
- 20 V, 20 V
2 V
54 nC
- 55 C
+ 175 C
180 W
Enhancement
HiPerFET
Tube
品牌: IXYS
配置: Single
組裝國家: Not Available
擴散國: Not Available
原產國: KR
下降時間: 20 ns
互導 - 最小值: 28 S
產品類型: MOSFETs
上升時間: 28 ns
系列: IXTP90N075
原廠包裝數量: 50
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 35 ns
標準開啟延遲時間: 14 ns
每件重量: 2 g
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所選屬性: 0

規格書

此功能需要啟用JavaScript。

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Gen2 Trench Gate Power MOSFETs

IXYS Gen2 Trench Gate Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A  (TC=@25°C). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These IXYS devices promote device consolidation through the reduction or elimination of multiple paralleled lower current rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system simplicity, reliability, and cost.

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