Name: IXYS IXTP80N10T
Brand: IXYS
SKU: 747-IXTP80N10T
Price: 30.83 HKD
Availability: InStock

說明：

MOSFET 80 Amps 100V 13.0 Rds

Pricing (HKD)

數量	單價	總價
	HK$30.83	HK$30.83
	HK$15.86	HK$158.60
	HK$14.39	HK$1,439.00
	HK$12.74	HK$6,370.00
	HK$12.66	HK$12,660.00

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商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-220-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	100 V
Id - C連續漏極電流:	80 A
Rds On - 漏-源電阻:	14 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	2.5 V
Qg - 閘極充電:	60 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	230 W
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
下降時間:	48 ns
產品類型:	MOSFETs
上升時間:	54 ns
系列:	IXTP80N10
原廠包裝數量:	50
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	40 ns
標準開啟延遲時間:	31 ns
每件重量:	2 g

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篩選文檔:

規格書

IXTP80N10T 規格書

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CNHTS:: 8541290000
TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.