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IXTA180N10T

Name: IXYS IXTA180N10T
Brand: IXYS
SKU: 747-IXTA180N10T
Price: 55.24 HKD
Availability: InStock

影像僅供參考
請參閱產品規格

Mouser 編號：

747-IXTA180N10T

製造商編號：

IXTA180N10T

製造商：

IXYS

說明：

MOSFET 180 Amps 100V 6.1 Rds

規格書:

IXTA180N10T 規格書

ECAD模型:

下載免費的庫載入器，為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

更多資訊

瞭解更多關於IXYS IXTA180N10T的資訊

庫存量: 597

庫存：: 597

可立即送貨

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在途量:: 700

預期17/8/2026
工廠前置作業時間：: 23

週工廠預計生產時間數量大於所顯示的數量。

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$55.24	HK$55.24
	HK$27.62	HK$276.20
	HK$26.30	HK$2,630.00
	HK$22.93	HK$11,465.00
	HK$22.61	HK$22,610.00

備用包裝

製造商元件編號:

IXTA180N10T-TRL

包裝:

Reel, Cut Tape

供貨情況:

庫存量

價格:

HK$55.57

最小值:

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
技術:	Si
安裝風格:	SMD/SMT
封裝/外殼:	D2PAK-3 (TO-263-3)
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	100 V
Id - C連續漏極電流:	180 A
Rds On - 漏-源電阻:	6.4 mOhms
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	480 W
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	KR
下降時間:	31 ns
產品類型:	MOSFETs
上升時間:	54 ns
系列:	IXTA180N10
原廠包裝數量:	50
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	42 ns
標準開啟延遲時間:	33 ns
每件重量:	1.600 g

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篩選文檔:

規格書

IXTA180N10T 規格書

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 8541299900
ECCN:: EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.

Gen1 Trench Gate Power MOSFETs

IXYS Gen1 Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low R_DS(ON), enabling very low power dissipation. This, combined with wide-ranging operating junction temperature, from -40°C to 175°C, make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.