Name: IXYS IXFH69N30P
Brand: IXYS
SKU: 747-IXFH69N30P
Price: 106.7 HKD
Availability: InStock

說明：

MOSFET 69 Amps 300V 0.049 Rds

Pricing (HKD)

數量	單價	總價
	HK$106.70	HK$106.70
	HK$64.61	HK$646.10
	HK$55.32	HK$6,638.40
	HK$53.18	HK$27,121.80

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商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	300 V
Id - C連續漏極電流:	69 A
Rds On - 漏-源電阻:	49 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	5 V
Qg - 閘極充電:	156 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 150 C
Pd - 功率消耗 :	500 W
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
組裝國家:	Not Available
擴散國:	Not Available
原產國:	KR
下降時間:	27 ns
互導 - 最小值:	30 S
產品類型:	MOSFETs
上升時間:	25 ns
系列:	IXFH69N30
原廠包裝數量:	30
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	75 ns
標準開啟延遲時間:	25 ns
每件重量:	6 g

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541500000
MXHTS:: 85415001
ECCN:: EAR99

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