IXFH220N06T3

Name: IXYS IXFH220N06T3
Brand: IXYS
SKU: 747-IXFH220N06T3
Price: 60.09 HKD
Availability: OutOfStock

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Mouser 編號：

747-IXFH220N06T3

製造商編號：

IXFH220N06T3

製造商：

IXYS

說明：

MOSFET 60V/220A TrenchT3

規格書:

IXFH220N06T3 規格書

ECAD模型:

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工廠前置作業時間：: 請聯系洽詢價格和交期

輸入數量：

最少： 1 多個： 1

單價:

HK$-.--

總價:

HK$-.--

估計關稅:

Pricing (HKD)

數量	單價	總價
	HK$60.09	HK$60.09
	HK$42.42	HK$424.20
	HK$35.26	HK$4,231.20
	HK$31.40	HK$16,014.00
	HK$28.03	HK$28,590.60
10,020	報價

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商品屬性	屬性值	選擇屬性
製造商:	IXYS
產品類型:	MOSFET
RoHS:
REACH - SVHC:
技術:	Si
安裝風格:	Through Hole
封裝/外殼:	TO-247-3
晶體管極性:	N-Channel
通道數:	1 Channel
Vds - 漏-源擊穿電壓:	60 V
Id - C連續漏極電流:	220 A
Rds On - 漏-源電阻:	4 mOhms
Vgs - 閘極-源極電壓:	- 20 V, 20 V
Vgs th - 門源門限電壓 :	2 V
Qg - 閘極充電:	136 nC
最低工作溫度:	- 55 C
最高工作溫度:	+ 175 C
Pd - 功率消耗 :	440 W
通道模式:	Enhancement
公司名稱:	HiPerFET
封裝:	Tube
品牌:	IXYS
配置:	Single
下降時間:	17 ns
互導 - 最小值:	87 S
產品類型:	MOSFETs
上升時間:	20 ns
系列:	IXF
原廠包裝數量:	30
子類別:	Transistors
晶體管類型:	1 N-Channel
標準斷開延遲時間:	46 ns
標準開啟延遲時間:	24 ns
每件重量:	6 g

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規格書

IXFH220N06T3 規格書

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CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
TARIC:: 8541290000
MXHTS:: 85412999
ECCN:: EAR99

60V TrenchT3 HiPerFET Power MOSFETs

IXYS 60V TrenchT3™ HiPerFET™ Power MOSFETs are ultra-low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1mΩ and withstand a junction temperature up to +175°C. The series is also avalanche rated at high avalanche current levels. Due to the high-current carrying capability of the TrenchT3 HiPerFET Power MOSFETs, paralleling multiple devices may not be necessary. This simplifies the power system and improves its reliability at the same time. The fast intrinsic body diode of TrenchT3 HiPerFET MOSFETs helps achieve high efficiency, especially during high-speed switching. IXYS 60V TrenchT3 HiPerFET Power MOSFETs are available in TO-220, TO-263, and TO-247 international standard size packages for design flexibility.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.