IXFH220N06T3

IXYS
747-IXFH220N06T3
IXFH220N06T3

製造商:

說明:
MOSFET 60V/220A TrenchT3

ECAD模型:
下載免費的庫載入器,為ECAD工具轉換此文件。瞭解更多關於 ECAD 型號的資訊。

供貨情況

庫存:
暫無庫存
工廠前置作業時間:
最少: 1   多個: 1
單價:
HK$-.--
總價:
HK$-.--
估計關稅:

Pricing (HKD)

數量 單價
總價
HK$60.09 HK$60.09
HK$42.42 HK$424.20
HK$35.26 HK$4,231.20
HK$31.40 HK$16,014.00
HK$28.03 HK$28,590.60
10,020 報價

商品屬性 屬性值 選擇屬性
IXYS
產品類型: MOSFET
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-247-3
N-Channel
1 Channel
60 V
220 A
4 mOhms
- 20 V, 20 V
2 V
136 nC
- 55 C
+ 175 C
440 W
Enhancement
HiPerFET
Tube
品牌: IXYS
配置: Single
下降時間: 17 ns
互導 - 最小值: 87 S
產品類型: MOSFETs
上升時間: 20 ns
系列: IXF
原廠包裝數量: 30
子類別: Transistors
晶體管類型: 1 N-Channel
標準斷開延遲時間: 46 ns
標準開啟延遲時間: 24 ns
每件重量: 6 g
找到產品:
若要顯示類似商品,請選取至少一個核選方塊
至少選中以上一個核取方塊以顯示在此類別中類似的產品。
所選屬性: 0

此功能需要啟用JavaScript。

CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99

60V TrenchT3 HiPerFET Power MOSFETs

IXYS 60V TrenchT3™ HiPerFET™ Power MOSFETs are ultra-low on-resistance, rugged devices designed for industrial power conversion applications. TrenchT3 HiPerFET MOSFETs offer on-resistance as low as 3.1mΩ and withstand a junction temperature up to +175°C. The series is also avalanche rated at high avalanche current levels. Due to the high-current carrying capability of the TrenchT3 HiPerFET Power MOSFETs, paralleling multiple devices may not be necessary. This simplifies the power system and improves its reliability at the same time. The fast intrinsic body diode of TrenchT3 HiPerFET MOSFETs helps achieve high efficiency, especially during high-speed switching. IXYS 60V TrenchT3 HiPerFET Power MOSFETs are available in TO-220, TO-263, and TO-247 international standard size packages for design flexibility.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.